Seoul, Korea: Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced the industry''s first mass production of its 30-nanometer (nm) class, 32 gigabit (Gb), multi-level-cell (MLC) NAND memory with an asynchronous DDR (double data rate) interface. The company said it began shipping initial production of its DDR NAND to major OEMs at the end of November.
DDR NAND will sharply raise the read performance of mobile devices requiring high-speeds and large amounts of storage space. Samsung''s new DDR MLC NAND chip, which reads at 133 megabits per second (Mbps), would replace single data rate (SDR) MLC NAND, which has an overall read performance of 40Mbps.
"With the new DDR MLC NAND, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse CE devices," said Soo-In Cho, executive vice president and general manager of the Memory Division at Samsung Electronics.
He added, "Samsung''s accelerated push toward providing memory solutions at much higher speeds will enable faster introduction of high-performance mobile devices that deliver added convenience and greater value to consumers."